Impact of voltage scaling on STT-MRAMs through a variability-aware simulation framework

Conference Object

Abstract: In this paper, we focus on the study of the impact of voltage scaling on writing performance and ene

Palabras claves:

Magnetic tunnel junction (MTJ), Modeling, STT-MRAM, variability, voltage scaling

Autores:

Carangelo G., Carpentieri M., Crupi F., Finocchio G., Marco Lanuzza, Rose R.D.

Fuentes:

scopus