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scopus(3)
(1011) preferential orientation of polycrystalline AlN grown on SiO<inf>2</inf>/Si wafers by reactive sputter magnetron technique
ArticleAbstract: Aluminum nitride (AlN) is a ceramic compound that could be used as a processing material for semiconPalabras claves:Autores:Bemporad E., Bolmaro R., Burgi J., Craievich A.F., Feugeas J.N., Javier García Molleja, Piccoli M.Fuentes:scopusReactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction
ArticleAbstract: The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin films byPalabras claves:Autores:Burgi J., Craievich A.F., Feugeas J.N., Javier García Molleja, Kellermann G., Neuenschwander R.Fuentes:scopusSynchrotron radiation applied to real-Time studies of the kinetics of growth of aluminum nitride thin multilayers
ArticleAbstract: This article reports the design, construction, and first use of an experimental device consisting ofPalabras claves:Autores:Bemporad E., Burgi J., Craievich A.F., De Felicis D., Djouadi M.A., Feugeas J.N., Javier García Molleja, Jouan P.Y., Kellermann G., Neuenschwander R., Piccoli M.Fuentes:scopus