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First principles band gap engineering of [1 1 0] oriented 3C-SiC nanowires
ArticleAbstract: Silicon carbide nanowires offer excellent opportunities for technological applications under harsh ePalabras claves:DFT, Formation energy, SiC Nanowires, surface passivationAutores:Cruz-Irisson M., de Santiago F., José Luis Cuevas, Miranda A., Pérez L.A., Ramírez J., Trejo A.Fuentes:googlescopusElectronic structure and optical vibrational modes of 3C-SiC nanowires
ArticleAbstract: The electronic structure and vibrational optical modes of silicon carbide nanowires (SiCNWs) were stPalabras claves:DFT, nanowires, Phonons, Silicon carbideAutores:Cruz-Irisson M., José Luis Cuevas, Miranda A., Ojeda M., Pérez L.A., Trejo A.Fuentes:googlescopusEffects of morphology on the electronic properties of hydrogenated silicon carbide nanowires
ArticleAbstract: The effects on the electronic band structure of hydrogenated cubic silicon carbide (β-SiC) nanowiresPalabras claves:Electronic band structure, nanowires, Silicon carbide, Tight-bindingAutores:Cruz-Irisson M., José Luis Cuevas, Miranda A., Ramos A.E.Fuentes:googlescopusQuantum confinement effects on electronic properties of hydrogenated 3C-SiC nanowires
ArticleAbstract: In this work, the effect of the morphology on the electronic band structure and density of states ofPalabras claves:density functional theory, nanowires, Silicon carbide, Tight-bindingAutores:Cruz-Irisson M., José Luis Cuevas, Miranda A., Ramos A.E.Fuentes:googlescopusTheoretical approach to the phonon modes of GaSb nanowires
ArticleAbstract: Gallium Antimonide nanowires (GaSbNWs) have attracted much attention due to their possible applicatiPalabras claves:DFT, Gallium Antimonide, nanowires, PhononsAutores:Calvino M., Cruz-Irisson M., José Luis Cuevas, Miranda A., Ojeda M., Pérez L.A., Salazar F., Trejo A.Fuentes:googlescopus