Vachtsevanos G.J.
6
Coauthors
2
Documentos
Volumen de publicaciones por año
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| Año de publicación | Num. Publicaciones |
|---|---|
| 2018 | 2 |
Publicaciones por áreas de conocimiento
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| Área de conocimiento | Num. Publicaciones |
|---|---|
| Ingeniería electrónica | 1 |
| Ciencia de materiales | 1 |
Publicaciones por áreas temáticas
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| Área temática | Num. Publicaciones |
|---|---|
| Física aplicada | 2 |
Principales fuentes de datos
| Origen | Num. Publicaciones |
|---|---|
| Scopus | 2 |
| Google Scholar | 2 |
| RRAAE | 0 |
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Coautores destacados por número de publicaciones
| Coautor | Num. Publicaciones |
|---|---|
| J. M. Aller | 2 |
| José Manuel Aller Castro | 2 |
| Ginart A. | 2 |
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Publicaciones del autor
Fundamentals for reliability and early diagnosis for inverter power drives
Book PartAbstract: Several decades ago, the prevalent concept of the community was that there were fundamentally differPalabras claves:aging, Bathtub curve, Degradation process, Drives, Early Diagnosis, Elasticity, Electric drives, Electromagnetic energy conversion, Energy transfer, Failure rate, Fault diagnosis, Hard switching power losses, Impurities, Inverter power drives, Invertors, Losses, multilevel inverters, Power electronics, supply and supervisory circuits, Power switches, PWM, reliability, Resonant converters, RL circuit load, RLC circuit, Statistical life estimation, Thermal considerations, Three-phase inverters, TopologyAutores:Ginart A., J. M. Aller, José Manuel Aller Castro, Vachtsevanos G.J.Fuentes:googlescopusEarly diagnosis in power semiconductors: MOSFET, IGBT, emerging materials (SiC and GaNs)
Book PartAbstract: The reliability of a power converter depends mainly on the endurance of its main component, the powePalabras claves:ageing, Aging effects, Bipolar devices, Bipolar junction transistors, Bipolar transistors, BJT, Degradation process, Failure analysis, Failure mechanisms, Failure propagation, Fault diagnosis, FET, Field-effect transistors, Gallium compounds, Gallium nitride, GaN, IGBT, III-V semiconductors, Insulated gate bipolar transistors, Insulated gate field effect transistors, Inverters, Invertors, MOSFET, Parasitic structures, Power bipolar transistors, Power converter reliability, Power convertors, power electronics, Power electronics, supply and supervisory circuits, Power MOSFET, power semiconductor devices, Power semiconductors diagnosis, Power semiconductors model, reliability, Semiconductor device modelling, equivalent circuits, design and testing, Semiconductor device models, Semiconductor device reliability, SiC, Silicon carbide, Silicon compounds, Silicon-based power semiconductors, Wide band gap semiconductorsAutores:Ginart A., J. M. Aller, José Manuel Aller Castro, Vachtsevanos G.J.Fuentes:googlescopus