Mostrando 2 resultados de: 2
Filtros aplicados
Publisher
18th International Workshop on Computational Electronics, IWCE 2015(1)
Applied Physics Letters(1)
Área temáticas
Física aplicada(2)
Año de Publicación
2015(2)
Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
ArticleAbstract: This work theoretically studies the influence of both the geometry and the discrete nature of dopantPalabras claves:Autores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusThe impact of lead geometry and discrete doping on NWFET operation
Conference ObjectAbstract: This work investigates the influence of discrete dopant positions and lead geometry on the contact rPalabras claves:Dielectrics, Doping, Geometry, Impurities, Logic gates, Semiconductor process modeling, siliconAutores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopus