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AM<sup>4</sup>: MRAM Crossbar Based CAM/TCAM/ACAM/AP for In-Memory Computing
ArticleAbstract: In-memory computing seeks to minimize data movement and alleviate the memory wall by computing in-siPalabras claves:associative memories, associative processor, CAM, Double-barrier MTJ, emerging memories, MRAM, MTJ, Non-von Neumann computer architecture, TCAMAutores:Esteban Garzón, Marco Lanuzza, Teman A., Yavits L.Fuentes:scopusA Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation
ArticleAbstract: In this paper, we propose an energy-efficient, reliable, hybrid, 10-transistor/2-Double-Barrier-MagnPalabras claves:Double-barrier MTJ, energy-efficiency, Low-power, non-volatile TCAM (NV-TCAM)Autores:Carpentieri M., Esteban Garzón, Finocchio G., Marco Lanuzza, Teman A., Yavits L.Fuentes:scopusEmbedded memories for cryogenic applications
ArticleAbstract: The ever-growing interest in cryogenic applications has prompted the investigation for energy-efficiPalabras claves:77 K, Cold electronics, Cryogenic, Embedded memory, gain-cell embedded DRAM (GC-eDRAM), Low-power, Magnetic tunnel junction (MTJ), SRAM, STT-MRAMAutores:Esteban Garzón, Marco Lanuzza, Teman A.Fuentes:scopusSimulation Analysis of DMTJ-Based STT-MRAM Operating at Cryogenic Temperatures
ArticleAbstract: This article investigates spin-transfer torque magnetic random access memories (STT-MRAMs) based onPalabras claves:77 K, compact model, Cryogenic computing, double-barrier magnetic tunnel junction (DMTJ), spin-transfer torque magnetic random access memory (STT-MRAM)Autores:Carpentieri M., Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A.Fuentes:scopusQuantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model
ArticleAbstract: Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductoPalabras claves:2d materials, Armchair graphene nanoribbon field effect transistor (AGNRFET), Graphene, High-k dielectric, Low Power, Quantum capacitance, Tunnel FETsAutores:Avnon A., Esteban Garzón, Golman R., Marco Lanuzza, Ngo H.D., Teman A.Fuentes:scopus