Gain-Cell Embedded DRAM under Cryogenic Operation-A First Study

Article

Abstract: Operating circuits under cryogenic conditions is effective for a large spectrum of applications. How

Palabras claves:

Cryogenic, data retention time (DRT), edge-direct tunneling, Embedded memory, gain-cell embedded DRAM (GC-eDRAM), subthreshold leakage

Autores:

Esteban Garzón, Greenblatt Y., Harel O., Marco Lanuzza, Teman A.

Fuentes:

scopus