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A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation
ArticleAbstract: In this paper, we propose an energy-efficient, reliable, hybrid, 10-transistor/2-Double-Barrier-MagnPalabras claves:Double-barrier MTJ, energy-efficiency, Low-power, non-volatile TCAM (NV-TCAM)Autores:Carpentieri M., Esteban Garzón, Finocchio G., Marco Lanuzza, Teman A., Yavits L.Fuentes:scopusAIDA: Associative In-Memory Deep Learning Accelerator
ArticleAbstract: This work presents an associative in-memory deep learning processor (AIDA) for edge devices. An assoPalabras claves:Autores:Esteban Garzón, Marco Lanuzza, Teman A., Yavits L.Fuentes:scopusEDAM: Edit Distance tolerant Approximate Matching content addressable memory
Conference ObjectAbstract: We propose a novel edit distance-tolerant content addressable memory (EDAM) for energy-efcient approPalabras claves:Autores:Esteban Garzón, Hanhan R., Jahshan Z., Marco Lanuzza, Teman A., Yavits L.Fuentes:scopusHamming Distance Tolerant Content-Addressable Memory (HD-CAM) for DNA Classification
ArticleAbstract: This paper proposes a novel Hamming distance tolerant content-addressable memory (HD-CAM) for energyPalabras claves:Approximate search, content addressable memory, DNA classification, hamming distance (HD)Autores:Esteban Garzón, Golman R., Hanhan R., Jahshan Z., Marco Lanuzza, Teman A., Vinshtok-Melnik N., Yavits L.Fuentes:scopusExploiting STT-MRAMs for Cryogenic Non-Volatile Cache Applications
ArticleAbstract: This paper evaluates the potential of spin-transfer torque magnetic random-access memories (STT-MRAMPalabras claves:77 K, cache memory, cold computing, Cryogenic, STT-MRAMAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A.Fuentes:scopusEmbedded memories for cryogenic applications
ArticleAbstract: The ever-growing interest in cryogenic applications has prompted the investigation for energy-efficiPalabras claves:77 K, Cold electronics, Cryogenic, Embedded memory, gain-cell embedded DRAM (GC-eDRAM), Low-power, Magnetic tunnel junction (MTJ), SRAM, STT-MRAMAutores:Esteban Garzón, Marco Lanuzza, Teman A.Fuentes:scopusSimulation Analysis of DMTJ-Based STT-MRAM Operating at Cryogenic Temperatures
ArticleAbstract: This article investigates spin-transfer torque magnetic random access memories (STT-MRAMs) based onPalabras claves:77 K, compact model, Cryogenic computing, double-barrier magnetic tunnel junction (DMTJ), spin-transfer torque magnetic random access memory (STT-MRAM)Autores:Carpentieri M., Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A.Fuentes:scopus