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A Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation
ArticleAbstract: In this paper, we propose an energy-efficient, reliable, hybrid, 10-transistor/2-Double-Barrier-MagnPalabras claves:Double-barrier MTJ, energy-efficiency, Low-power, non-volatile TCAM (NV-TCAM)Autores:Carpentieri M., Esteban Garzón, Finocchio G., Marco Lanuzza, Teman A., Yavits L.Fuentes:scopusA RISC-V-based Research Platform for Rapid Design Cycle
Conference ObjectAbstract: This work proposes a novel platform for bringing a project from the concept to the tapeout stage inPalabras claves:Autores:Esteban Garzón, Golman R., Harel O., Kra Y., Marco Lanuzza, Noy T., Pollock A., Rudin Y., Shoshan Y., Teman A., Weitzman Y., Yuzhaninov S.Fuentes:scopusAIDA: Associative In-Memory Deep Learning Accelerator
ArticleAbstract: This work presents an associative in-memory deep learning processor (AIDA) for edge devices. An assoPalabras claves:Autores:Esteban Garzón, Marco Lanuzza, Teman A., Yavits L.Fuentes:scopusAdjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs
ArticleAbstract: This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnelPalabras claves:77 K, Cryogenic cache, Cryogenic electronics, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopusEDAM: Edit Distance tolerant Approximate Matching content addressable memory
Conference ObjectAbstract: We propose a novel edit distance-tolerant content addressable memory (EDAM) for energy-efcient approPalabras claves:Autores:Esteban Garzón, Hanhan R., Jahshan Z., Marco Lanuzza, Teman A., Yavits L.Fuentes:scopusGain-Cell Embedded DRAM under Cryogenic Operation-A First Study
ArticleAbstract: Operating circuits under cryogenic conditions is effective for a large spectrum of applications. HowPalabras claves:Cryogenic, data retention time (DRT), edge-direct tunneling, Embedded memory, gain-cell embedded DRAM (GC-eDRAM), subthreshold leakageAutores:Esteban Garzón, Greenblatt Y., Harel O., Marco Lanuzza, Teman A.Fuentes:scopusHamming Distance Tolerant Content-Addressable Memory (HD-CAM) for DNA Classification
ArticleAbstract: This paper proposes a novel Hamming distance tolerant content-addressable memory (HD-CAM) for energyPalabras claves:Approximate search, content addressable memory, DNA classification, hamming distance (HD)Autores:Esteban Garzón, Golman R., Hanhan R., Jahshan Z., Marco Lanuzza, Teman A., Vinshtok-Melnik N., Yavits L.Fuentes:scopusExploiting STT-MRAMs for Cryogenic Non-Volatile Cache Applications
ArticleAbstract: This paper evaluates the potential of spin-transfer torque magnetic random-access memories (STT-MRAMPalabras claves:77 K, cache memory, cold computing, Cryogenic, STT-MRAMAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A.Fuentes:scopusEmbedded memories for cryogenic applications
ArticleAbstract: The ever-growing interest in cryogenic applications has prompted the investigation for energy-efficiPalabras claves:77 K, Cold electronics, Cryogenic, Embedded memory, gain-cell embedded DRAM (GC-eDRAM), Low-power, Magnetic tunnel junction (MTJ), SRAM, STT-MRAMAutores:Esteban Garzón, Marco Lanuzza, Teman A.Fuentes:scopusQuantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model
ArticleAbstract: Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductoPalabras claves:2d materials, Armchair graphene nanoribbon field effect transistor (AGNRFET), Graphene, High-k dielectric, Low Power, Quantum capacitance, Tunnel FETsAutores:Avnon A., Esteban Garzón, Golman R., Marco Lanuzza, Ngo H.D., Teman A.Fuentes:scopus