Mostrando 4 resultados de: 4
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IEEE Transactions on Electron Devices(2)
2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(1)
IEEE International Reliability Physics Symposium Proceedings(1)
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scopus(4)
ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric
Conference ObjectAbstract: The degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET) under on-statePalabras claves:de-trapping, GaN, interfacial layer, nitride, on-state, oxide, Schottky diode, trapping rateAutores:Bakeroot B., De Jaeger B., Decoutere S., Eliana Acurio, Trojman L.Fuentes:googlescopusInfluence of GaN- and Si <inf>3</inf> N <inf>4</inf> -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
ArticleAbstract: This paper analyses the influence of the GaN and Si 3 N 4 passivation (or 'cap') layer on the top ofPalabras claves:activation energy, AlGaN/GaN Schottky diode, breakdown voltage, GaN cap, off-state, passivation layer, reliability, Si N cap 3 4Autores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Ronchi N., Trojman L.Fuentes:googlescopusReliability improvements in AlGaN/GaN schottky barrier diodes with a gated edge termination
ArticleAbstract: This paper focuses on the time-dependent breakdown of the AlGaN/GaN Schottky barrier diodes with a gPalabras claves:AlGaN/GaN Schottky diode, gated edge termination (GET), hard breakdown, intrinsic failures, off-state, reliability, Weibull distributionAutores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Ronchi N., Trojman L.Fuentes:googlescopusReliability in GaN-based devices for power applications
Conference ObjectAbstract: This paper analyzes two important reliability issues in AlGaN/GaN devices: positive bias temperaturePalabras claves:AlGaN/GaN SBD, breakdown voltage, de-trapping, GET, MOS-HEMT, PBTI, reliability, TDDB, TRAPPINGAutores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Iucolano F., Ronchi N., Trojman L.Fuentes:googlescopus