Effects of (i)a-Si:H deposition temperature on high-efficiency silicon heterojunction solar cells

Article

Abstract: Excellent surface passivation induced by (i)a-Si:H is critical to achieve high-efficiency silicon he

Palabras claves:

FTIR, intrinsic amorphous silicon, Passivation, silicon heterojunction solar cells

Autores:

Cao L., Han C., Isabella O., Mazzarella L., Paul Procel, Smets A.H.M., Weeber A., Yang G., Yao Z., Zeman M., Zhao Y.

Fuentes:

scopus