Intersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Field

Conference Object

Abstract: The energy differences between subbands of a semiconductor quantum well delta-doped inside the well

Palabras claves:

electric field, Modulation doping, shallow impurity, SiGe quantum wells

Autores:

Akimov V., David Laroze, Demediuk R., Duque C.A., Fomina O., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.

Fuentes:

scopus