BTI saturation and universal relaxation in SiC power MOSFETs

Article

Abstract: This work focuses on the positive bias temperature instability of SiC-based MOSFETs under different

Palabras claves:

de-trapping, PBTI, recovery, SiC, TRAPPING, Universal relaxation, Zafar's model

Autores:

Crupi F., Eliana Acurio, Meneghesso G., Reggiani S., Sánchez Luis

Fuentes:

scopus