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ODS 7: Energía asequible y no contaminante(2)
ODS 9: Industria, innovación e infraestructura(2)
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scopus(2)
Characterization and Modeling of BTI in SiC MOSFETs
Conference ObjectAbstract: SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hystPalabras claves:Autores:Consentino G., Cornigli D., Crupi F., Fiegna C., Reggiani S., Sánchez Luis, Sangiorgi E., Tallarico A.N., Valdivieso C.Fuentes:scopusBTI saturation and universal relaxation in SiC power MOSFETs
ArticleAbstract: This work focuses on the positive bias temperature instability of SiC-based MOSFETs under differentPalabras claves:de-trapping, PBTI, recovery, SiC, TRAPPING, Universal relaxation, Zafar's modelAutores:Crupi F., Eliana Acurio, Meneghesso G., Reggiani S., Sánchez LuisFuentes:scopus