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Characterization and Modeling of BTI in SiC MOSFETs
Conference ObjectAbstract: SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hystPalabras claves:Autores:Consentino G., Cornigli D., Crupi F., Fiegna C., Reggiani S., Sánchez Luis, Sangiorgi E., Tallarico A.N., Valdivieso C.Fuentes:scopusBTI saturation and universal relaxation in SiC power MOSFETs
ArticleAbstract: This work focuses on the positive bias temperature instability of SiC-based MOSFETs under differentPalabras claves:de-trapping, PBTI, recovery, SiC, TRAPPING, Universal relaxation, Zafar's modelAutores:Crupi F., Eliana Acurio, Meneghesso G., Reggiani S., Sánchez LuisFuentes:scopusThreshold voltage instability in SiC power MOSFETs
Conference ObjectAbstract: Charge trapping and de-trapping phenomena in SiC power MOSFETs were investigated by performing two dPalabras claves:Autores:Consentino G., Crupi F., Esteban Guevara, Meneghesso G., Reggiani S., Sánchez LuisFuentes:scopus