Threshold voltage instability in SiC power MOSFETs

Conference Object

Abstract: Charge trapping and de-trapping phenomena in SiC power MOSFETs were investigated by performing two d

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Autores:

Consentino G., Crupi F., Esteban Guevara, Meneghesso G., Reggiani S., Sánchez Luis

Fuentes:

scopus