Characterization and Modeling of BTI in SiC MOSFETs

Conference Object

Abstract: SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hyst

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Autores:

Consentino G., Cornigli D., Crupi F., Fiegna C., Reggiani S., Sánchez Luis, Sangiorgi E., Tallarico A.N., Valdivieso C.

Fuentes:

scopus