Mostrando 5 resultados de: 5
Filtros aplicados
Publisher
Solid-State Electronics(2)
Energy Procedia(1)
Journal of Computational Electronics(1)
Microelectronic Engineering(1)
Área temáticas
Ciencias de la computación(1)
Instrumentos de precisión y otros dispositivos(1)
Otras ramas de la ingeniería(1)
Assessment of paper-based MoS<inf>2</inf> FET for Physically Unclonable Functions
ArticleAbstract: Two-dimensional (2D) materials are recognized as a promising beyond-CMOS technology thanks to theirPalabras claves:2d materials, Hardware security, Molybdenum disulfide (MoS ) 2, Paper electronics, physically unclonable function (PUF), Verilog-A modelAutores:Conti S., Crupi F., Iannaccone G., Magnone P., Marco Lanuzza, Rose R.D., Vatalaro M.Fuentes:scopusAnalysis of the impact of doping levels on performance of back contact - back junction solar cells
Conference ObjectAbstract: In this work, by exploiting two-dimensional (2-D) TCAD numerical simulations, we performed a study oPalabras claves:BC-BJ solar cell, Dark analysis, Doping peak, TCAD simulationAutores:Cocorullo G., Crupi F., Fiegna C., Maccaronio V., Magnone P., Paul Procel, Zanuccoli M.Fuentes:scopusNumerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell
ArticleAbstract: This work presents a study based on electro-optical numerical simulations of the impact of geometricPalabras claves:Numerical modeling, Recombination analysis, Silicon solar cells, TCAD simulationsAutores:Cocorullo G., Crupi F., Fiegna C., Maccaronio V., Magnone P., Paul Procel, Zanuccoli M.Fuentes:scopusOn recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
ArticleAbstract: This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recesPalabras claves:AlGaN/GaN MOS-HEMT, Oxide traps, PBTI, Recessed gate, SiO 2Autores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Meneghesso G., Trojman L.Fuentes:googlescopusImpact of AlN layer sandwiched between the GaN and the Al<inf>2</inf>O<inf>3</inf> layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
ArticleAbstract: This work compares the performance and the reliability of recessed-gate AlGaN/GaN MOS-HEMTs with twoPalabras claves:Al O 2 3, BTI, GaN, MOS-HEMTsAutores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Trojman L.Fuentes:googlescopus