On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

Article

Abstract: This experimental study focuses on the positive bias temperature instability (PBTI) in a fully reces

Palabras claves:

AlGaN/GaN MOS-HEMT, Oxide traps, PBTI, Recessed gate, SiO 2

Autores:

Crupi F., Eliana Acurio, Iucolano F., Magnone P., Meneghesso G., Trojman L.

Fuentes:

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scopus