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Assessment of paper-based MoS<inf>2</inf> FET for Physically Unclonable Functions
ArticleAbstract: Two-dimensional (2D) materials are recognized as a promising beyond-CMOS technology thanks to theirPalabras claves:2d materials, Hardware security, Molybdenum disulfide (MoS ) 2, Paper electronics, physically unclonable function (PUF), Verilog-A modelAutores:Conti S., Crupi F., Iannaccone G., Magnone P., Marco Lanuzza, Rose R.D., Vatalaro M.Fuentes:scopusAnalysis of the impact of doping levels on performance of back contact - back junction solar cells
Conference ObjectAbstract: In this work, by exploiting two-dimensional (2-D) TCAD numerical simulations, we performed a study oPalabras claves:BC-BJ solar cell, Dark analysis, Doping peak, TCAD simulationAutores:Cocorullo G., Crupi F., Fiegna C., Maccaronio V., Magnone P., Paul Procel, Zanuccoli M.Fuentes:scopusA comparative study of MWT architectures by means of numerical simulations
Conference ObjectAbstract: In order to improve the efficiency of c-Si and mc-Si solar cells, Metal Wrap Though (MWT) architectuPalabras claves:back contact, MWT, numerical simulation, Photovoltaics, Solar cell, VíaAutores:Crupi F., Fiegna C., Frei M., Magnone P., Marco Lanuzza, Rose R.D., Sangiorgi E., Tonini D.Fuentes:scopusNumerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell
ArticleAbstract: This work presents a study based on electro-optical numerical simulations of the impact of geometricPalabras claves:Numerical modeling, Recombination analysis, Silicon solar cells, TCAD simulationsAutores:Cocorullo G., Crupi F., Fiegna C., Maccaronio V., Magnone P., Paul Procel, Zanuccoli M.Fuentes:scopusOn recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
ArticleAbstract: This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recesPalabras claves:AlGaN/GaN MOS-HEMT, Oxide traps, PBTI, Recessed gate, SiO 2Autores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Meneghesso G., Trojman L.Fuentes:googlescopusImpact of AlN layer sandwiched between the GaN and the Al<inf>2</inf>O<inf>3</inf> layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
ArticleAbstract: This work compares the performance and the reliability of recessed-gate AlGaN/GaN MOS-HEMTs with twoPalabras claves:Al O 2 3, BTI, GaN, MOS-HEMTsAutores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Trojman L.Fuentes:googlescopus