Impact of AlN layer sandwiched between the GaN and the Al<inf>2</inf>O<inf>3</inf> layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs

Article

Abstract: This work compares the performance and the reliability of recessed-gate AlGaN/GaN MOS-HEMTs with two

Palabras claves:

Al O 2 3, BTI, GaN, MOS-HEMTs

Autores:

Crupi F., Eliana Acurio, Iucolano F., Magnone P., Trojman L.

Fuentes:

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scopus