Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

Article

Abstract: This work presents a systematic analysis of the transport mechanism and surface passivation of tunne

Palabras claves:

Numerical simulations, p-type carrier selective contacts, Poly-silicon carbide, Tunneling

Autores:

Ballif C., Crupi F., Ingenito A., Löper P., Paul Procel

Fuentes:

scopus