A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

Article

Abstract: In this work we confirm the validity of the Defect-Centric distribution for pbkp_redicting the CHC b

Palabras claves:

channel hot carrier degradation, defect-centric distribution, variability

Autores:

Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L., Tuinhout H., Wils N.

Fuentes:

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scopus