Strategy to mitigate the dipole interfacial states in (i)a-Si:H/MoO<inf>x</inf> passivating contacts solar cells

Article

Abstract: Molybdenum oxide (MoOx) is attractive for applications as hole-selective contact in silicon heteroju

Palabras claves:

(i)a-Si:H/MoO hole transport contact x, interfacial dipole layer, plasma treatment, TCAD electrical modeling

Autores:

Alcañiz A., Han C., Isabella O., Kawa E., Mazzarella L., Paul Procel, Taheri P., Tiringer U., Yang G., Zeman M., Zhao Y.

Fuentes:

scopus