Influence of ionized impurities in silicon nanowire MOS transistors

Conference Object

Abstract: This study presents ionized impurity impacts on silicon nanowire MOS transistors. We first calculate

Palabras claves:

Green's function, Impurity, Modeling, Nanowire, Quantum transport, transistor

Autores:

Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.

Fuentes:

scopus