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Article(3)
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IEEE Transactions on Electron Devices(1)
IEEE Transactions on Magnetics(1)
IEEE Transactions on Nanotechnology(1)
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Compact Modeling of Perpendicular STT-MTJs with Double Reference Layers
ArticleAbstract: This paper shows the steps to set up a simulation framework for perpendicular spin-transfer torque (Palabras claves:compact model, Double-barrier MTJ, non-volatile flip-flop (NVFF), STT switchingAutores:Carpentieri M., Crupi F., D'Aquino M., Finocchio G., Marco Lanuzza, Rose R.D.Fuentes:scopusA Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJs
ArticleAbstract: The aim of this paper is to introduce a compact model for perpendicular spin-transfer torque (STT)-mPalabras claves:compact model, Magnetic tunnel junction (MTJ), spin-transfer torque (STT), STT-magnetic random access memory (MRAM), technology scalingAutores:Carangelo G., Carpentieri M., Crupi F., D'Aquino M., Finocchio G., Marco Lanuzza, Rose R.D.Fuentes:scopusSimulation Analysis of DMTJ-Based STT-MRAM Operating at Cryogenic Temperatures
ArticleAbstract: This article investigates spin-transfer torque magnetic random access memories (STT-MRAMs) based onPalabras claves:77 K, compact model, Cryogenic computing, double-barrier magnetic tunnel junction (DMTJ), spin-transfer torque magnetic random access memory (STT-MRAM)Autores:Carpentieri M., Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A.Fuentes:scopus