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Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework
ArticleAbstract: This paper explores non-volatile cache memories implemented by spin-transfer torque magnetic randomPalabras claves:cache memory, Device-to-system simulation framework, double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAMAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusImpact of Scaling on Physical Unclonable Function Based on Spin-Orbit Torque
ArticleAbstract: We analyze the scalability of a spin-orbit torque random access memory (SOT-MRAM)-based physical uncPalabras claves:CMOS/spintronic circuit, micromagnetics, physical unclonable function, Spin electronics, spin-orbit torque random access memory, three-Terminal devicesAutores:Carpentieri M., Chiappini S., Crupi F., Finocchio G., Marco Lanuzza, Puliafito V., Rose R.D.Fuentes:scopusSpin-orbit torque based physical unclonable function
ArticleAbstract: This paper introduces the concept of spin-orbit-torque-magnetic random access memory (SOT-MRAM) basePalabras claves:Autores:Carpentieri M., Chiappini S., Crupi F., Finocchio G., Marco Lanuzza, Moriyama T., Ono T., Puliafito V., Rose R.D., Siracusano G., Zeng Z.Fuentes:scopus