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A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24%
ArticleAbstract: A highly transparent passivating contact (TPC) as front contact for crystalline silicon (c-Si) solarPalabras claves:Autores:Cao P., Ding K., Duan W., Eberst A., Finger F., Isabella O., Kirchartz T., Klingebiel B., Köhler M., Lambertz A., Li S., Luysberg M., Macco B., Paul Procel, Pomaska M., Qiu K., Rau U., Santbergen R., Zamchiy A.Fuentes:scopusTransparent silicon carbide/tunnel SiO<inf>2</inf> passivation for c-Si solar cell front side: Enabling J<inf>sc</inf> > 42 mA/cm<sup>2</sup> and iV<inf>oc</inf> of 742 mV
ArticleAbstract: N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promisPalabras claves:antireflecting coating, excellent passivation, Heterojunction, hot wire CVD, lean process, Refractive index, Silicon carbide, tunnel oxideAutores:Ding K., Eberst A., Finger F., Isabella O., Kim D.Y., Köhler M., Li S., Paul Procel, Pomaska M., Qiu K., Rau U., Singh A., Smirnov V., Zamchiy A., Zeman M.Fuentes:scopus