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Design and optimization of hole collectors based on nc-SiO<inf>x</inf>:H for high-efficiency silicon heterojunction solar cells
ArticleAbstract: Low activation energy (Ea) and wide bandgap (Eg) are essential for (p)-contacts to achieve effectivePalabras claves:Activation energy (E ) a, Contact resistivity (ρ ) c, Hydrogenated nanocrystalline silicon oxide (nc-SiO :H) x, Interface treatment, optoelectrical properties, Silicon heterojunction (SHJ)Autores:Han C., Isabella O., Mazzarella L., Paul Procel, Weeber A., Yang G., Zeman M., Zhao Y.Fuentes:scopusWill SiO<inf>x</inf>-pinholes for SiO<inf>x</inf>/poly-Si passivating contact enhance the passivation quality?
ArticleAbstract: Passivating contacts based on poly-Si have enabled record-high c-Si solar cell efficiencies due to tPalabras claves:Enhanced passivation, Pinhole density, Poly-Si passivating Contacts, Thermal diffusion budgetAutores:Gram R., Han C., Isabella O., Mazzarella L., Paul Procel, Singh M., Yang G., Yao Z., Zeman M., Zhao Y.Fuentes:scopusRoom-temperature sputtered tungsten-doped indium oxide for improved current in silicon heterojunction solar cells
ArticleAbstract: The window layers limit the performance of silicon heterojunction (SHJ) solar cells with front and bPalabras claves:Improved near-infrared response, Room temperature transparent electrode, Silicon heterojunction solar cell, Tungsten-doped indium oxideAutores:Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Santbergen R., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopus