Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design

Conference Object

Abstract: Ultra-Thin Body and Box Fully Depleted silicon on insulator (UTBB FD-SOI) has been identified as att

Palabras claves:

28nm UTBB FD-SOI, Back biasing, Single Well, Subthreshold digital design

Autores:

Fish A., Levi I., Marco Lanuzza, Ramiro Taco

Fuentes:

scopus