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Publisher: "2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014"

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28nm UTBB FD-SOI(1)

Back biasing(1)

Subthreshold digital design(1)

Exploring back biasing opportunities in 28nm UTBB FD-SOI technology for subthreshold digital design

Conference Object

Abstract: Ultra-Thin Body and Box Fully Depleted silicon on insulator (UTBB FD-SOI) has been identified as att

Palabras claves:

28nm UTBB FD-SOI, Back biasing, Single Well, Subthreshold digital design

Fish A., Levi I., Marco Lanuzza, Ramiro Taco