High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells

Article

Abstract: Broadband transparent conductive oxide layers with high electron mobility (μe) are essential to furt

Palabras claves:

electron mobility, hydrogenated fluorine-doped indium oxide (IFO:H), passivating contacts, Silicon heterojunction (SHJ), transparent conductive oxide (TCO)

Autores:

Gulino A., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Spitaleri L., Tijssen M., Yang G., Zeman M., Zhang X., Zhao Y.

Fuentes:

scopus