SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons

Article

Abstract: This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage

Palabras claves:

Commercial off-the-shelf (COTS), low bias voltage, neutron tests, radiation hardness, reliability, Soft error, static random access memories (SRAM)

Autores:

Baylac M., Clemente J.A., Fraire J., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.

Fuentes:

scopus