Background impurities and a delta-doped QW. Part I: Center doping

Article

Abstract: The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/Si

Palabras claves:

Impurity binding energy, Modulation doping, self-consistent calculation, semiconductor quantum wells

Autores:

Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.

Fuentes:

scopus