Three-dimensional k.p quantum simulations of p-type nanowire MOS transistors: Influence of ionized impurity

Conference Object

Abstract: We have developed a full three-dimensional real-space quantum transport simulator for p-type nanowir

Palabras claves:

Acceptor, Hole, Impurity, k.p method, Nanowire, Quantum, Resonant interferences, transport

Autores:

Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.

Fuentes:

scopus