Transparent silicon carbide/tunnel SiO<inf>2</inf> passivation for c-Si solar cell front side: Enabling J<inf>sc</inf> &gt; 42 mA/cm² and iV<inf>oc</inf> of 742 mV

Article

Abstract: N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promis

Palabras claves:

antireflecting coating, excellent passivation, Heterojunction, hot wire CVD, lean process, Refractive index, Silicon carbide, tunnel oxide

Autores:

Ding K., Eberst A., Finger F., Isabella O., Kim D.Y., Köhler M., Li S., Paul Procel, Pomaska M., Qiu K., Rau U., Singh A., Smirnov V., Zamchiy A., Zeman M.

Fuentes:

scopus