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Article(3)
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IEEE Transactions on Device and Materials Reliability(1)
IEEE Transactions on Electron Devices(1)
Microelectronic Engineering(1)
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Influence of GaN- and Si <inf>3</inf> N <inf>4</inf> -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
ArticleAbstract: This paper analyses the influence of the GaN and Si 3 N 4 passivation (or 'cap') layer on the top ofPalabras claves:activation energy, AlGaN/GaN Schottky diode, breakdown voltage, GaN cap, off-state, passivation layer, reliability, Si N cap 3 4Autores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Ronchi N., Trojman L.Fuentes:googlescopusImpact of AlN layer sandwiched between the GaN and the Al<inf>2</inf>O<inf>3</inf> layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
ArticleAbstract: This work compares the performance and the reliability of recessed-gate AlGaN/GaN MOS-HEMTs with twoPalabras claves:Al O 2 3, BTI, GaN, MOS-HEMTsAutores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Trojman L.Fuentes:googlescopusReliability Assessment of AlGaN/GaN Schottky Barrier Diodes under ON-State Stress
ArticleAbstract: This article aims to study the degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge TermiPalabras claves:AlGaN/GaN SBD, extrinsic, GET, INTRINSIC, lifetime, on-state, reliabilityAutores:Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Tatiana Moposita, Trojman L.Fuentes:scopus