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Filtros aplicados
Publisher
2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(1)
IEEE Transactions on Device and Materials Reliability(1)
Área temáticas
Física aplicada(2)
Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes under ON-State Stress
ArticleAbstract: This article aims to study the degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge TermiPalabras claves:AlGaN/GaN SBD, extrinsic, GET, INTRINSIC, lifetime, on-state, reliabilityAutores:Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Tatiana Moposita, Trojman L.Fuentes:scopusReliability in GaN-based devices for power applications
Conference ObjectAbstract: This paper analyzes two important reliability issues in AlGaN/GaN devices: positive bias temperaturePalabras claves:AlGaN/GaN SBD, breakdown voltage, de-trapping, GET, MOS-HEMT, PBTI, reliability, TDDB, TRAPPINGAutores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Iucolano F., Ronchi N., Trojman L.Fuentes:googlescopus