Mostrando 3 resultados de: 3
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Publisher
2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(1)
Microelectronics Reliability(1)
Solid-State Electronics(1)
Área temáticas
Física aplicada(3)
BTI saturation and universal relaxation in SiC power MOSFETs
ArticleAbstract: This work focuses on the positive bias temperature instability of SiC-based MOSFETs under differentPalabras claves:de-trapping, PBTI, recovery, SiC, TRAPPING, Universal relaxation, Zafar's modelAutores:Crupi F., Eliana Acurio, Meneghesso G., Reggiani S., Sánchez LuisFuentes:scopusOn recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
ArticleAbstract: This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recesPalabras claves:AlGaN/GaN MOS-HEMT, Oxide traps, PBTI, Recessed gate, SiO 2Autores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Meneghesso G., Trojman L.Fuentes:googlescopusReliability in GaN-based devices for power applications
Conference ObjectAbstract: This paper analyzes two important reliability issues in AlGaN/GaN devices: positive bias temperaturePalabras claves:AlGaN/GaN SBD, breakdown voltage, de-trapping, GET, MOS-HEMT, PBTI, reliability, TDDB, TRAPPINGAutores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Iucolano F., Ronchi N., Trojman L.Fuentes:googlescopus