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ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric
Conference ObjectAbstract: The degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET) under on-statePalabras claves:de-trapping, GaN, interfacial layer, nitride, on-state, oxide, Schottky diode, trapping rateAutores:Bakeroot B., De Jaeger B., Decoutere S., Eliana Acurio, Trojman L.Fuentes:googlescopusRF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies
Conference ObjectAbstract: In this work, we are studying the effect of the technology scaling for different full-wave rectifierPalabras claves:32nm, CCDD, Full wave rectifier, Multiplier, PCE, TFET, VCEAutores:David Rivadeneira, Eliana Acurio, Luis Miguel Prócel Moya, Marco Lanuzza, Marco Villegas, Ramiro Taco, Trojman L.Fuentes:scopus