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Microscopy and Microanalysis(2)
ACS Nano(1)
Journal of Materials Chemistry C(1)
Journal of Materials Research(1)
Nature Communications(1)
Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy
ArticleAbstract: Layered materials are an actively pursued area of research for realizing highly scaled technologiesPalabras claves:Mo, molecular beam epitaxy (MBE), TeAutores:Azcatl A., Furdyna J., Idrobo J.C., Jena D., Kim M., Leonardo Basile, Liu X., Lu N., Magno K., Rouvimov S., Vishwanath S., Wallace R., Xing H.Fuentes:googlescopusEngineering single-atom dynamics with electron irradiation
ArticleAbstract: Atomic engineering is envisioned to involve selectively inducing the desired dynamics of single atomPalabras claves:Autores:Dong M., Hofer C., Idrobo J.C., Kong J., Kotakoski J., Leonardo Basile, Li J., Meyer J.C., Su C., Su G., Susi T., Tripathi M., Wang H., Wang Z., Yan Q.B., Zhang Z.Fuentes:googlescopusMonochromatic STEM-EELS for correlating the atomic structure and optical properties of two-dimensional materials
Conference ObjectAbstract:Palabras claves:Autores:Aoki T., Carpenter R., Dellby N., Idrobo J.C., Krivanek O.L., Leonardo Basile, Mardinly J., Pennycook S.J., Salafranca J., Zhou W.Fuentes:googlescopusHeteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges
ArticleAbstract: By adapting the concept of epitaxy to two-dimensional space, we show the growth of a single-atomic-lPalabras claves:Autores:Clark K., Deng W., Gu G., Idrobo J.C., Leonardo Basile, Li A.P., Liu L., McCarty K., Park J., Siegel D.Fuentes:googlescopusImaging and spectroscopy of graphene/hexagonal boron nitride lateral heterostructure interfaces
Conference ObjectAbstract:Palabras claves:Autores:Gu G., Idrobo J.C., Leonardo Basile, Liu L.Fuentes:googlescopusPatterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
ArticleAbstract: The formation of semiconductor heterojunctions and their high-density integration are foundations ofPalabras claves:Autores:Boulesbaa A., Geohegan D.B., Ivanov I.N., Lee J., Leonardo Basile, Lin M.W., Lupini A.R., Mahjouri-Samani M., Puretzky A.A., Rouleau C.M., Wang K., Xiao K., Yoon M.Fuentes:googlescopusUltrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response
ArticleAbstract: We demonstrate the strategies and principles for the performance improvement of layered semiconductoPalabras claves:Autores:Cao W., Feng W., Hu P.A., Idrobo J.C., Leonardo Basile, Li X., Tan P.H., Tian W., Wu J.B., Xiao K., Yang B., Zheng W., Zhou X.Fuentes:googlescopusVan der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene
ArticleAbstract: Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially structured maPalabras claves:Chemical vapor deposition, GaSe, Graphene, heterostructures, van der Waals epitaxyAutores:Chi M., Geohegan D.B., Huang B., Idrobo J.C., Lee J., Leonardo Basile, Li X., Lin M.W., Ma C., Puretzky A.A., Rouleau C.M., Sumpter B.G., Vlassiouk I.V., Xiao K., Yoon M.Fuentes:googlescopus