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Threshold voltage degradation for n-channel 4H-SiC power MOSFETs
ArticleAbstract: In this study, threshold voltage instability on commercial silicon carbide (SiC) power metal oxide sPalabras claves:Hysteresis, Pulsed IV measurements, Recovery voltage, Silicon carbide MOSFET, Stress modeling, Threshold voltageAutores:Cristian Rocha, Esteban Guevara, Katherine Guerrero, Victor Isaac Herrera PerezFuentes:googlescopusThreshold voltage instability in SiC power MOSFETs
Conference ObjectAbstract: Charge trapping and de-trapping phenomena in SiC power MOSFETs were investigated by performing two dPalabras claves:Autores:Consentino G., Crupi F., Esteban Guevara, Meneghesso G., Reggiani S., Sánchez LuisFuentes:scopus