Threshold voltage degradation for n-channel 4H-SiC power MOSFETs

Article

Abstract: In this study, threshold voltage instability on commercial silicon carbide (SiC) power metal oxide s

Palabras claves:

Hysteresis, Pulsed IV measurements, Recovery voltage, Silicon carbide MOSFET, Stress modeling, Threshold voltage

Autores:

Cristian Rocha, Esteban Guevara, Katherine Guerrero, Victor Isaac Herrera Perez

Fuentes:

google

scopus