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Assessment of 2D-FET Based Digital and Analog Circuits on Paper
ArticleAbstract: Two-dimensional (2D) materials represent an emerging technology for transistor electronics in view oPalabras claves:2d materials, Field-Effect Transistor (FET), Molybdenum disulfide (MoS ) 2, Paper electronics, Verilog-A modelAutores:Crupi F., Iannaccone G., Marco Lanuzza, Rose R.D., Vatalaro M.Fuentes:scopusAssessment of paper-based MoS<inf>2</inf> FET for Physically Unclonable Functions
ArticleAbstract: Two-dimensional (2D) materials are recognized as a promising beyond-CMOS technology thanks to theirPalabras claves:2d materials, Hardware security, Molybdenum disulfide (MoS ) 2, Paper electronics, physically unclonable function (PUF), Verilog-A modelAutores:Conti S., Crupi F., Iannaccone G., Magnone P., Marco Lanuzza, Rose R.D., Vatalaro M.Fuentes:scopusBenchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits
ArticleAbstract: In this work, a benchmark for low-power digital applications of a III-V TFET technology platform agaPalabras claves:Full adders, III-V, Ripple carry adders, TFETAutores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Strangio S.Fuentes:scopusAdjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs
ArticleAbstract: This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnelPalabras claves:77 K, Cryogenic cache, Cryogenic electronics, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopusDigital and analog TFET circuits: Design and benchmark
ReviewAbstract: In this work, we investigate by means of simulations the performance of basic digital, analog, and mPalabras claves:Analog circuits, digital circuits, Simulation, TCAD, Tunnel-FETAutores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Settino F., Strangio S.Fuentes:scopusLow voltage logic circuits exploiting gate level dynamic body biasing in 28 nm UTBB FD-SOI
ArticleAbstract: In this paper, the recently proposed gate level body bias (GLBB) technique is evaluated for low voltPalabras claves:Dynamic body biasing, Low-voltage logic design, UTBB FD-SOIAutores:Fish A., Levi I., Marco Lanuzza, Ramiro TacoFuentes:scopusQuantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model
ArticleAbstract: Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductoPalabras claves:2d materials, Armchair graphene nanoribbon field effect transistor (AGNRFET), Graphene, High-k dielectric, Low Power, Quantum capacitance, Tunnel FETsAutores:Avnon A., Esteban Garzón, Golman R., Marco Lanuzza, Ngo H.D., Teman A.Fuentes:scopusRelaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM
ArticleAbstract: Spin-transfer torque magnetic random-access memory (STT-MRAM) is considered as a premiere candidatePalabras claves:77 K, Cryogenic computing, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopusSTT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing
ArticleAbstract: Spin-transfer torque magnetic tunnel junction (STT-MTJ) technology is an attractive solution for desPalabras claves:Compact modeling, Logic-in-Memory, Material implication, SIMPLY, STT-MTJAutores:Crupi F., Marco Lanuzza, Pavan P., Puglisi F.M., Rose R.D., Zanotti T.Fuentes:scopusSmart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing
ArticleAbstract: Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficiPalabras claves:Compact modeling, Logic-in-Memory, Material implication, SIMPLY, STT-MTJAutores:Crupi F., Marco Lanuzza, Pavan P., Puglisi F.M., Rose R.D., Zanotti T.Fuentes:scopus