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Conference Object(2)
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2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(1)
Latin American Electron Devices Conference, LAEDC 2019(1)
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A phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusResistive Switching Model of OxRAM Devices Based on Intrinsic Electrical Parameters
Conference ObjectAbstract: In this work, a model for the resistive switching of ReRAM devices that considers the electrical sigPalabras claves:1T1R, active region, HRS, INTRINSIC, LRS, Model, RERAM, reset, resistive switching, series resistance, set, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopus