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Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices
ArticleAbstract: A compact model is proposed using a stochastic approach to capture the resistive switching behaviorPalabras claves:Conductive-bridge random access (CBRAM), Polyethylene oxide (PEO), stochastic model, Switching probabilityAutores:Deleruyelle D., Laurent Raymond, Mahato P., Silvana Guitarra, Trojman L.Fuentes:googlescopusStochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration
ArticleAbstract: In this paper, we propose a stochastic model for the resistive switching of ReRAM devices with 1T1RPalabras claves:1T1R configuration, HfO -based memory 2, HfO2-based memory, Intrinsic parameters, Resistive random access memory (ReRAM), stochastic model, Switching probabilityAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusA probabilistic compact model of ReRAM memories for accurate and high-performance simulation
ArticleAbstract: This work presents a compact, circuit-level model for resistive random-access memories (ReRAMs) thatPalabras claves:Device history, ReRAM model, resistive switching, stochastic process, Switching probability, variabilityAutores:A. Vélez, J. Cevallos, Martin Gavilanez, Silvana GuitarraFuentes:scopus