A phenomenological model of the resistive switching for Hf-based ReRAM devices

Conference Object

Abstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random Acces

Palabras claves:

active region, Model, percolation, RERAM, resistive switching, Simulation, stochastic

Autores:

Laurent Raymond, Silvana Guitarra, Trojman L.

Fuentes:

google

scopus