Mostrando 10 resultados de: 29
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Publisher
Electronics (Switzerland)(3)
Proceedings of the 2016 IEEE ANDESCON, ANDESCON 2016(3)
2020 IEEE 11th Latin American Symposium on Circuits and Systems, LASCAS 2020(2)
2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021(2)
2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022(2)
Área temáticas
Ciencias de la computación(7)
Electricidad y electrónica(2)
Ingeniería y operaciones afines(2)
Física(1)
Instrumentos de precisión y otros dispositivos(1)
Comparison of Different Technologies for Transistor Rectifiers Circuits for Micropower Energy Harvesters
Conference ObjectAbstract: The present work shows the comparison of planar CMOS, FinFET and Tunnel-FET technologies in the prinPalabras claves:energy harvester, FinFET, full-wave rectifier, planar CMOS, Tunnel-FETAutores:J. Paredes, Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusAssessment of 10 nm Tunnel-FETs and FinFETs transistors for ultra-low voltage and high-speed digital circuits
Conference ObjectAbstract: The trade-offs of the Tunnel-FETs (TFETs) in terms of delay, energy per cycle, and noise margin arePalabras claves:digital circuits, Energy-delay trade-off, FinFET, Tunnel-FET (TFET), Ultra-low voltageAutores:Christian Cao, Kevin Landázuri, Luis Miguel Prócel Moya, Mateo Rendón, Ramiro Taco, Trojman L.Fuentes:scopusA 180 nm Low-Cost Operational Amplifier for IoT Applications
Conference ObjectAbstract: This paper presents the design and post-layout simulation of a two-stage operational amplifier (opamPalabras claves:0.18 μ m, cadence virtuoso, High-performance, internet of things (IoT), Low-cost, miller compensation, operational amplifier, post-layout simulation, stabilityAutores:Ariana Musello, Cristhopher Mosquera, Kevin Vicuña, Luis Miguel Prócel Moya, Marco Lanuzza, Mateo Rendón, Ramiro Taco, Trojman L.Fuentes:scopusA Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusA Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for pbkp_redicting the CHC bPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopusDC and low-frequency noise behavior of the conductive filament in bipolar HfO<inf>2</inf>-based resistive random access memory
ArticleAbstract: This paper addresses the low frequency noise (LFN) properties of bipolar HfO2-based resistive randomPalabras claves:Hafnium oxide, Low-frequency noise, Non-volatile memory, Quantum point contact, Resistive RAMAutores:Crupi F., Goux L., Luis Miguel Prócel Moya, Maccaronio V., Miranda E., Simoen E., Trojman L.Fuentes:googlescopusDefect-centric distribution of channel hot carrier degradation in nano-MOSFETs
ArticleAbstract: The defect-centric distribution is used, for the first time, to study the channel hot carrier (CHC)Palabras claves:channel hot-carrier, defect-centric distribution, nFETAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusDesign and optimization of a Vibrational MEMS-Based Energy Harvester
Conference ObjectAbstract: This paper describes the design of a Vibrational Energy Harvester (VEH) based on a microelectromechaPalabras claves:acceleration, MEMs, VEHAutores:Brenes A., Eduardo Ortiz-Holguin, Luis Miguel Prócel Moya, Trojman L., Vladimirescu A.Fuentes:googlescopusFrom 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits
ArticleAbstract: In this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are dPalabras claves:32 nm, CCDD, Full wave rectifier, Multiplier, PCE, TFET, VCEAutores:Eduardo Ortiz-Holguin, Luis Miguel Prócel Moya, Marco Villegas, Ramiro Taco, Trojman L.Fuentes:googlescopusFabrication of Nanopores Using the Controlled Dielectric Breakdown Technique
Conference ObjectAbstract: Controlled dielectric breakdown is becoming the main solid-state nanopore fabrication technique worlPalabras claves:ACC, controlled dielectric breakdown, DAQ, DNA RNA sensor, fluidic cell, leakage current, Silicon nitride, solid-state nanopores, transmembraneAutores:Amaguayo N., Ariana Musello, José A. Bustamante, Luis Miguel Prócel Moya, Pablo Lopez, Trojman L.Fuentes:scopus