Mostrando 4 resultados de: 4
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Publisher
Proceedings of the 2016 IEEE ANDESCON, ANDESCON 2016(2)
IEEE Transactions on Device and Materials Reliability(1)
Microelectronic Engineering(1)
Área temáticas
Física aplicada(4)
A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusA Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for pbkp_redicting the CHC bPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopusStatistical study of SiON short MOSFET under Channel Hot Carrier stress
Conference ObjectAbstract: In this work we study the threshold voltage variation (ΔVth) under a Channel Hot Carrier stress usinPalabras claves:channel hot carrier degradation, CMOS, defect generation SiON, mobility, short channel device, StatisticAutores:Juan S. Acosta, Luis Miguel Prócel Moya, Mario Ortega, Trojman L.Fuentes:scopusTemperature study of defect generation, under channel hot carrier stress for 35-nm gate length MOSFETs using the Defect-Centric perspective
Conference ObjectAbstract: In this work, we present an analysis to separate the interface states generation from the oxide trapPalabras claves:channel hot carrier degradation, defect centrict framework, interface states, Oxide trapsAutores:Crupi F., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopus