Reconfigurable CMOS/STT-MTJ Non-Volatile Circuit for Logic-in-Memory Applications

Conference Object

Abstract: The unique properties of spin-transfer torque magnetic tunnel junctions (STT-MTJs) have led to promi

Palabras claves:

logic-in-memory (LIM), Magnetic tunnel junction (MTJ), non-volatile logic gates, spin-transfer torque (STT)

Autores:

Benjamin Zambrano, Esteban Garzón, Luis Miguel Prócel Moya, Ramiro Taco, Tatiana Moposita, Trojman L.

Fuentes:

scopus